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| FDMC7672 N-Channel Power Trench(R) MOSFET July 2009 FDMC7672 N-Channel Power Trench(R) MOSFET 30 V, 16.9 A, 5.7 m: Features Max rDS(on) = 5.7 m: at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 m: at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 C Operating and Storage Junction Temperature Range (Note 3) (Note 1a) TC = 25 C TA = 25 C (Note 1a) Ratings 30 20 20 16.9 50 144 2.3 -55 to +150 mJ W C A Units V V Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 53 C/W Package Marking and Ordering Information Device Marking FDMC7672 Device FDMC7672 Package MLP 3.3x3.3 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units (c)2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 1 www.fairchildsemi.com FDMC7672 N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 PA, VGS = 0 V ID = 250 PA, referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 125 C VGS = 20 V, VDS = 0 V 30 13 1 250 100 V mV/C PA nA On Characteristics VGS(th) 'VGS(th) 'TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 PA ID = 250 PA, referenced to 25 C VGS = 10 V, ID = 16.9 A rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 15.0 A VGS = 10 V, ID = 16.9 A TJ = 125 C VDD = 5 V, ID = 16.9 A 1.2 1.9 -6 4.3 5.4 5.5 82 5.7 7.0 6.9 S m: 3.0 V mV/C gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2925 1050 80 0.9 3890 1400 120 pF pF pF : Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V ID = 16.9 A VDD = 15 V, ID = 16.9 A, VGS = 10 V, RGEN = 6 : 13 6 31 5 40 18 9 4 24 12 49 10 57 24 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 16.9 A VGS = 0 V, IS = 1.9 A (Note 2) (Note 2) 0.83 0.72 39 18 1.2 1.2 62 32 V ns nC IF = 16.9 A, di/dt = 100 A/Ps NOTES: 1. R TJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper b.125 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. 3. EAS of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, I AS = 17 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, I AS = 7.9 A. (c)2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 2 www.fairchildsemi.com FDMC7672 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V ID, DRAIN CURRENT (A) 4.5 4.0 3.5 3.0 VGS = 4 V VGS = 3.5 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 40 30 20 VGS = 3.5 V VGS = 6 V VGS = 4.5 V VGS = 4 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 0.5 0 10 VGS = 6 V VGS = 10 V VGS = 4.5 V 10 0 0.0 VGS = 3 V 0.5 1.0 1.5 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 20 SOURCE ON-RESISTANCE (m:) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 ID = 16.9 A VGS = 10 V rDS(on), DRAIN TO ID = 16.9 A PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 15 10 TJ = 125 oC 5 TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 50 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0 V 40 ID, DRAIN CURRENT (A) VDS = 5 V 10 1 0.1 0.01 TJ = -55 oC 30 20 TJ = 150 oC TJ = 25 oC TJ = -55 oC TJ = 150 oC TJ = 25 oC 10 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 3 www.fairchildsemi.com FDMC7672 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 16.9 A VDD = 10 V CAPACITANCE (pF) 5000 Ciss 8 VDD = 15 V VDD = 20 V 6 4 2 0 0 9 18 27 36 45 Qg, GATE CHARGE (nC) 1000 Coss 100 f = 1 MHz VGS = 0 V 50 0.1 Crss 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 70 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT (A) 10 TJ = 25 oC 50 40 VGS = 10 V TJ = 125 oC TJ = 100 oC 30 VGS = 4.5 V 20 10 Limited by Package RTJC = 4.0 C/W o 1 0.01 0.1 1 10 100 200 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 70 100 Ps ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature P(PK), PEAK TRANSIENT POWER (W) 2000 1000 VGS = 10 V 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 1 100 ms 1s 10 s DC 0.1 SINGLE PULSE TJ = MAX RATED RTJA = 125 oC/W TA = 25 oC 10 SINGLE PULSE RTJA = 125 oC/W 0.01 0.01 0.1 1 10 100 200 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 4 www.fairchildsemi.com FDMC7672 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZTJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA 0.001 0.0005 -4 10 RTJA = 125 C/W o 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 5 www.fairchildsemi.com FDMC7672 N-Channel Power Trench(R) MOSFET Dimensional Outline and Pad Layout 0.10 C 3.30 A B 2X 3.30 PIN#1 QUADRANT TOP VIEW 0.8 MAX 0.10 C 0.10 C 2X RECOMMENDED LAND PATTERN (0.203) 0.08 C 0.05 0.00 SEATING PLANE SIDE VIEW PIN #1 IDENT 1 (4X) 0.55 0.45 1.150 2.32 2.22 0.785 4 0.350 R0.150 0.299 2.05 1.95 8 0.65 1.95 5 0.40 (8X) 0.30 0.10 0.05 CAB C BOTTOM VIEW A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08XREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY (c)2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 6 www.fairchildsemi.com FDMC7672 N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) CorePLUSTM Global Power ResourceSM Programmable Active DroopTM (R) CorePOWERTM Green FPSTM QFET TinyBoostTM CROSSVOLTTM QSTM Green FPSTM e-SeriesTM TinyBuckTM GmaxTM CTLTM Quiet SeriesTM TinyLogic(R) GTOTM Current Transfer LogicTM RapidConfigureTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) PSerDesTM STEALTHTM MillerDriveTM Fairchild(R) SuperFETTM MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) UHC(R) (R) (R) FACT SuperSOTTM-8 OPTOPLANAR Ultra FRFETTM (R) FAST(R) SupreMOSTM UniFETTM FastvCoreTM VCXTM SyncFETTM FETBenchTM Sync-LockTM VisualMaxTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDMC7672 Rev.B 7 www.fairchildsemi.com |
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